Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Thin film & Quantum efficiency. The organization has 618 authors who have published 940 publications receiving 10674 citations.

Robust gain-scheduled linear parameter-varying control algorithm for a lab helicopter: A linear matrix inequality–based approach:

Abstract: The control performance of aerial vehicles can be easily affected by measurement error in sensor output, dynamic model error, model parameter variation, parametric uncertainty, external disturbance...

Direct Fabrication of Copper Nanoparticle Patterns through Electrohydrodynamic Printing in Cone-Jet Mode

Abstract: Recently, there has been growing interest in direct patterning of conductive nanoparticles on various substrates without utilizing complex micro-fabrication lithography process. The direct fabrication process using electrohydrodynamic printing is expected to be a powerful tool of application for direct patterning in the field of printed electronics. The key advantage of printing through electrohydrodynamic jetting in stable cone-jet mode is achievement of high resolution patterns. This article presents the direct patterning of the copper nanoparticles through electrohydrodynamic printing in cone-jet mode. The patterning was performed on glass substrates at different flow-rates by applying the highest value of applied voltage in stable-cone jet operating envelop. The minimum pattern width achieved with electrohydrodynamic printing at flow-rate of 20 µl/hr and applied DC voltage of 2.6 kV is 32 µm with 2 µm standard deviation. The pattern width achieved through electrohydrodynamic printing is 3.125 times sm...

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

Abstract: This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Optimization of parameters for micro friction stir welding of aluminum 5052 using Taguchi technique

Abstract: The study investigates the effect of basic parameters in friction stir welding of thin sheet. Using Aluminum Al 5052 as the base material and Taguchi L9 orthogonal array for optimization, three vital process parameters namely rotational speed, probe shape, and transverse speed were studied with the aim to maximize the tensile strength. Alongside the process, the effect on micro hardness and grain structure of the material was also investigated and metallographic properties were studied using Scanning Electron Microscopy (SEM). Fixtures made from Bakelite and mild steel were used in the process. Experiments performed on Bakelite fixture produced defective joint for all tool shapes. The results designate square-shaped tool as the one producing sound, defect-free, and high-strength joints. Hardness increases with increase in rotational speed and decreases with increase in transverse speed. Optimal parameters found were transverse speed 200 mm/min, rotational speed 3250 rpm, and square shaped tool.

Direct current and impedance spectroscopic studies on MoO3 modified ZnPc/ITO Schottky diodes

Abstract: We use experimental results of direct current and low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor ZnPc. The experimental results demonstrate an increase in current and holes mobility by the introduction of a thin MoO3 film at the ITO/ZnPc interface. This significantly improves the device performance. The improvement is explained in terms of the reduction in the effective barrier for charge transfer from ZnPc to ITO.