Institution
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Education•Topi, Pakistan•
About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Thin film & Quantum efficiency. The organization has 618 authors who have published 940 publications receiving 10674 citations.
Topics: Thin film, Quantum efficiency, Diode, Metamaterial, Graphene
Papers published on a yearly basis
Papers
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TL;DR: In this article, a biomimetic sensor was constructed using magnetic nanoparticles (mag) and molecularly imprinted polymer (MIP) for the determination of tetracycline antibiotics.
18 citations
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17 Dec 2011TL;DR: This work proposes a variation of the method suited for analyzing data that is represented as a dense matrix and is non-homogenous as is the case in gene expression, and provides empirical results on real world cancer datasets.
Abstract: We propose a new framework for bi-clustering gene expression data that is based on the notion of co-similarity between genes and samples Our work is based on a co-similarity based framework that iteratively learns similarity between rows using similarity between columns and vice-versa in a matrix The underlying concept, which is usually referred to as bi-clustering in the domain of bioinformatics, aims to find groupings of the feature set that exhibit similar behavior across sample subsets The algorithm has previously been shown to work well for document clustering in a sparse matrix representation We propose a variation of the method suited for analyzing data that is represented as a dense matrix and is non-homogenous as is the case in gene expression Our experiments show that, with the proposed variations, the method is well suited for finding bi-clusters with high degree of homogeneity and we provide empirical results on real world cancer datasets
18 citations
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TL;DR: In this paper, performances of an organic electron donor-π-bridge-electron acceptor (Dπ-A) type RK1 dye and the most common metallic N719 dye-sensitized solar cells (DSSCs) were compared.
Abstract: In this work, performances of an organic electron donor–π-bridge–electron acceptor (D–π–A) type RK1 dye and the most common metallic N719 dye based dye-sensitized solar cells (DSSCs) were compared. To gain insight into the behavior of these devices, current–voltage and impedance spectroscopic measurements were performed. From the current–voltage data, the parameters of cells including open-circuit voltage, short-circuit current, fill factor, solar energy-to-electricity conversion efficiency, series resistance, shunt resistance, and ideality factor were extracted. The RK1 based cell showed higher photovoltage, higher short-circuit current, solar energy-to-electricity conversion efficiency, higher shunt resistance and ideality factor. Using the Mott-Schottky plots, electrical properties of the cells were investigated and lower electron concentration was found for the RK1-DSSC. This high performance can be attributed to the higher absorption coefficient of the RK1 dye and relatively higher induced positive band-shift of the conduction band edge of the TiO2 semiconductor. The trends of the recombination resistance and the chemical capacitance as observed in the measured impedance spectra have also confirmed high photovoltaic performance of the RK1 based cell. Impedance spectra of the devices were observed both voltage and frequency dependent. At low frequencies, significant contribution of trap states was observed.
18 citations
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TL;DR: In this article, the authors used the Asian Development Bank (ADB) as a source of finance for the construction industry in the developing countries of the Asia-pacific region.
Abstract: Construction is commonly regarded as one of the major industries of an economy that is receiving a significant attention in the developing countries. This paper uses the Asian Development Bank (ADB...
18 citations
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TL;DR: In this article, the performance of green light-emitting diodes with specially designed AlGaN electron blocking layer is numerically investigated and it is shown that applying proposed electron blocking layers, the injection of holes inside the active region can be improved.
18 citations
Authors
Showing all 626 results
Name | H-index | Papers | Citations |
---|---|---|---|
Wajid Ali Khan | 128 | 1272 | 79308 |
Shuichi Miyazaki | 69 | 455 | 18513 |
Muhammad Zubair | 51 | 806 | 10265 |
Mohammad Islam | 44 | 192 | 9721 |
Asifullah Khan | 38 | 192 | 5109 |
Muhammad Waqas | 32 | 383 | 7336 |
Rana Abdul Shakoor | 30 | 140 | 3244 |
Noor Muhammad | 29 | 160 | 2656 |
Abdul Majid | 28 | 231 | 3134 |
Muhammad Abid | 27 | 377 | 3214 |
Iftikhar Ahmad | 26 | 143 | 2500 |
Shaheen Fatima | 24 | 79 | 2287 |
Ghulam Hussain | 24 | 127 | 1937 |
Zubair Ahmad | 24 | 145 | 1899 |
Muhammad Zahir Iqbal | 23 | 129 | 1624 |