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Effect of Crystallization Modes in TIPS-pentacene/Insulating Polymer Blends on the Gas Sensing Properties of Organic Field-Effect Transistors

TLDR
It is shown that when a solution processable organic semiconductor (6,13-bis(triisopropylsilylethynyl)pentacene) is blended with an insulating polymer (PS), morphological and structural characteristics of the blend films could be significantly influenced by the processing conditions like the spin coating time.
Abstract
Blending organic semiconductors with insulating polymers has been known to be an effective way to overcome the disadvantages of single-component organic semiconductors for high-performance organic field-effect transistors (OFETs). We show that when a solution processable organic semiconductor (6,13-bis(triisopropylsilylethynyl)pentacene, TIPS-pentacene) is blended with an insulating polymer (PS), morphological and structural characteristics of the blend films could be significantly influenced by the processing conditions like the spin coating time. Although vertical phase-separated structures (TIPS-pentacene-top/PS-bottom) were formed on the substrate regardless of the spin coating time, the spin time governed the growth mode of the TIPS-pentacene molecules that phase-separated and crystallized on the insulating polymer. Excess residual solvent in samples spun for a short duration induces a convective flow in the drying droplet, thereby leading to one-dimensional (1D) growth mode of TIPS-pentacene crystals. In contrast, after an appropriate spin-coating time, an optimum amount of the residual solvent in the film led to two-dimensional (2D) growth mode of TIPS-pentacene crystals. The 2D spherulites of TIPS-pentacene are extremely advantageous for improving the field-effect mobility of FETs compared to needle-like 1D structures, because of the high surface coverage of crystals with a unique continuous film structure. In addition, the porous structure observed in the 2D crystalline film allows gas molecules to easily penetrate into the channel region, thereby improving the gas sensing properties.

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Enhancement of Field-Effect Mobility by Surface-Mediated Molecular Ordering in Regioregular Polythiophene Thin Film Transistor

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Combining Machine Learning and Computational Chemistry for Predictive Insights Into Chemical Systems.

TL;DR: In this paper, the authors provide a review of the applications of computational chemistry and machine learning in molecular and materials modeling, retrosyntheses, catalysis, and drug design.
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References
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Journal ArticleDOI

Response enhancement mechanism of NO2 gas sensing in ultrathin pentacene field-effect transistors

TL;DR: In this article, a pentacene ultrathin film transistor has been integrated into the implement of a gas sensor based on an increase in its mobility and a shift of its threshold voltage.
Journal ArticleDOI

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection.

TL;DR: After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity.
Journal ArticleDOI

Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memories

TL;DR: In this paper, a surface-directed phase separation of a phase-separating mixture of P(VDF-TrFE) and F8BT was proposed to increase the number of electrically active semiconductor domains.
Journal ArticleDOI

High-performance triisopropylsilylethynyl pentacene transistors via spin coating with a crystallization-assisting layer.

TL;DR: TIPS-PEN OFETs fabricated at a spin speed of 300 rpm with a CYTOP-patterned substrate showed a field-effect mobility of 0.131 cm(2) V(-1) s(-1), which is a remarkable improvement over previous spin-coated TIPS- PEN OfETs.
Journal ArticleDOI

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

TL;DR: In this paper, the authors investigated the field effect mobility of 2,7-dioctyl-benzothieno[3,2-b][1] and C8-BTBT transistor.
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