Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
More filters
Journal ArticleDOI
P‐14: Effects of Film Density on IGZO Based TFT Device Reliability
Jaeyoon Park,Yongsung Kim,Ju Heyuck Baeck,Sehee Park,Jung-Suk Seo,Jiyong Noh,Kwon-Shik Park,Jeom-Jae Kim,Soo Young Yoon +8 more
TL;DR: In this article , the density effects of IGZO films were studied based on DFT calculations, and the electrical and physical properties between the high-density film and the conventional film were compared.
Journal ArticleDOI
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress
TL;DR: In this article , the scaling and performance bottlenecks in flexible transistors are addressed by demonstrating natively flexible RF indium tin oxide transistors with deeply scaled 15-nm-long channel, capable of operating in the 10-GHz frequency range.
Journal ArticleDOI
Embedded nanopattern for selectively suppressed thermal conductivity and enhanced transparency in a transparent conducting oxide film
Pung Keun Song,Elli Anastopoulou +1 more
TL;DR: In this article , an embedded nanopattern structure is filled with indium tin oxide (ITO) and sandwiched between two ITO layers, and the resulting triple-layered structure exhibits reduced thermal conductivity and excellent electrical conductivity.
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
Chun-Kuei Chen,Sonu Hooda,Zihang Fang,Manohar Lal,Zefeng Xu,Jieming Pan,Shih-Hao Tsai,E. G. Zamburg,A. Thean +8 more
TL;DR: In this article , the authors demonstrate a low-thermal budget defect-engineered process to achieve top-gated oxide-semiconductor ferroelectric field effect transistors (FeFETs).
Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes
TL;DR: In this paper, an ink-jet printed silver was used as source/drain electrodes to construct thin film transistors (TFTs) with solution-processed zinc indium tin oxide (ZITO) channel layer layer annealed at 400 C.
References
More filters
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.