Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Laser–Material Interactions for Flexible Applications
Daniel J. Joe,Seung Jun Kim,Jung-Hwan Park,Dae Yong Park,Han Eol Lee,Tae Hong Im,Insung S. Choi,Rodney S. Ruoff,Keon Jae Lee +8 more
TL;DR: Recent advances in laser-material interactions for inorganic-based flexible applications with regard to both materials and processes are presented.
Patent
Semiconductor memory device.
TL;DR: In this paper, the read circuit senses a change in a voltage of the bitline of a bitline, and applies a voltage which is different from the first voltage to the gate of the first transistor when it senses a voltage change.
Journal ArticleDOI
Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes
Hsing-Hung Hsieh,Chung-Chih Wu +1 more
TL;DR: In this article, a top-gate and bottom-gate amorphous ZnO TFTs of micrometer scales were implemented using fully lithographic and etching processes, achieving rather high field effect mobilities of 25 and 4cm2∕Vs and on-off current ratios of >107 and >106, respectively.
Journal ArticleDOI
Ultra-Flexible, “Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
Xinge Yu,Xinge Yu,Li Zeng,Nanjia Zhou,Peijun Guo,Fengyuan Shi,Donald B. Buchholz,Q. Ma,Junsheng Yu,Vinayak P. Dravid,Robert P. H. Chang,Michael J. Bedzyk,Tobin J. Marks,Antonio Facchetti +13 more
TL;DR: Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP) by adjusting the In2O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained.
Journal ArticleDOI
Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices
TL;DR: In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and highperforming thin-film transistor (TFT) devices in the context of fundamental understanding is presented.
References
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.