Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Solution processing of transparent conductors: from flask to film
TL;DR: This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films, with an introduction into the applications of and material criteria for TCOs.
Journal ArticleDOI
Low-Power Flexible Organic Light-Emitting Diode Display Device
Sunkook Kim,Hyuk-Jun Kwon,Sunghun Lee,Hong-shik Shim,Youngtea Chun,Woong Choi,Jin-ho Kwack,Dong-Won Han,Myoung-Seop Song,Sungchul Kim,Saeed Mohammadi,In-Seo Kee,Sang Yoon Lee +12 more
TL;DR: In order to achieve a highly fl exible OLED display device, the following characteristics are needed: i) a low temperature process to prevent deformation in plastic substrates, ii) a new optical architecture providing both fl exibility and high outdoor readability, iii) a thinner and lighter platform than for current OLED technologies that allows bending and folding.
Journal ArticleDOI
O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
TL;DR: In this article, it was shown that O-vacancy acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors.
Journal ArticleDOI
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
TL;DR: In this paper, the authors report characteristic of indium gallium zinc oxides (GIZOs) which is strongly associated with the film surface, and they show that at the pressure of 8×10−6Torr, the turn-on voltage dramatically shifts to nearly −47V of the negative gate bias direction.
Journal ArticleDOI
Printed Carbon Nanotube Electronics and Sensor Systems
Kevin Chen,Kevin Chen,Wei Gao,Sam Emaminejad,Daisuke Kiriya,Daisuke Kiriya,Hiroki Ota,Hiroki Ota,Hnin Yin Yin Nyein,Hnin Yin Yin Nyein,Kuniharu Takei,Ali Javey,Ali Javey +12 more
TL;DR: Here, recent progress made in printed carbon nanotube electronics is discussed in terms of materials, processing, devices, and applications for enabling practical applications.
References
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Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.