Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Solution-processed p-type copper oxide thin-film transistors fabricated by using a one-step vacuum annealing technique
TL;DR: In this article, a solution-processed CuxO TFTs achieved by using a one-step vacuum annealing technique could potentially be used for highperformance p-type electronic devices, which represents a great step towards the further development of low-cost and all-oxide CMOS electronics.
Journal ArticleDOI
Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers
TL;DR: In this paper, the changes of the performances of amorphous-indium-gallium-zincoxide (a-IGZO) TFTs on polyimide substrate after application of extreme mechanical bending strain are studied.
Journal ArticleDOI
Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs
TL;DR: In this paper, the optical and carrier transport properties of amorphous transparent zinc indium tin oxide ZITOa-ZITO thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition.
Journal ArticleDOI
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
TL;DR: In this article, the authors examined the electronic structures of a variety of amorphous oxide semiconductors and found that their ionization potentials vary greatly, depending upon the specific metal cations, and they showed that a-ZGO thin-film transistors exhibit no negative-bias illumination-stress instability with no passivation and no light-shielding layer.
Journal ArticleDOI
Light induced instability mechanism in amorphous InGaZn oxide semiconductors
John Robertson,Yuzheng Guo +1 more
TL;DR: In this paper, a model of negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials, which are present to compensate hydrogen donors.
References
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TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.