Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Book ChapterDOI
Metal Oxides in Photovoltaics: All-Oxide, Ferroic, and Perovskite Solar Cells
TL;DR: In this article, the most recent results observed when semiconductor oxides are applied in different NGPVs technologies are discussed, where the oxide is not only part of the device but also acts as the main light harvesting material.
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Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors
So Yeon Je,Byeong Geun Son,Hyun Gwan Kim,Man Young Park,Lee Mi Do,Rino Choi,Jae Kyeong Jeong +6 more
TL;DR: The solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs.
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Electrohydrodynamic (EHD) Printing of Molten Metal Ink for Flexible and Stretchable Conductor with Self-Healing Capability
Yiwei Han,Jingyan Dong +1 more
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Amorphous InGaZnO4 films: Gas sensor response and stability
Dae Jin Yang,George C. Whitfield,Nam Gyu Cho,Pyeong-Seok Cho,Il-Doo Kim,Howard Saltsburg,Harry L. Tuller +6 more
TL;DR: In this article, the response characteristics of amorphous-InGaZnO 4 (a-IGZO 4 ) thin films toward reducing/oxidizing gases (H 2 /NO 2 ), at sensor operating temperatures, are reported for the first time.
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All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors
TL;DR: In this paper, the authors reported all solution-processed high-resolution bottom-contact indium-gallium-zincoxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process.
References
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.