Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
More filters
Journal ArticleDOI
Dense electron system from gate-controlled surface metal-insulator transition.
Kai Liu,Deyi Fu,Deyi Fu,Jinbo Cao,Jinbo Cao,Joonki Suh,Kevin Wang,Chun Cheng,D. Frank Ogletree,Hua Guo,Hua Guo,Shamashis Sengupta,Asif Islam Khan,Chun Wing Yeung,Sayeef Salahuddin,Mandar M. Deshmukh,Junqiao Wu,Junqiao Wu +17 more
TL;DR: A dense surface electron system on the surface of single-crystal vanadium dioxide nanobeam via electrolyte gating is reported, which provides direct evidence of the electron correlation driving mechanism of the phase transition in VO(2).
Patent
Oxide etching method
TL;DR: In this article, an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acids was used to etch an amorphous oxide layer.
Journal ArticleDOI
Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor
Shinya Aikawa,Peter Darmawan,Keiichi Yanagisawa,Toshihide Nabatame,Yoshiyuki Abe,Kazuhito Tsukagoshi +5 more
TL;DR: In this paper, the authors proposed the use of indium tungsten oxide (IWO) as a channel material for thin-film transistors (TFTs) by using DC magnetron sputtering.
Journal ArticleDOI
Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel
TL;DR: In this paper, the correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of p d.
References
More filters
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.