Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Stable room temperature deposited amorphous InGaZnO4 thin film transistors
Wantae Lim,S.-H. Kim,Yu-Lin Wang,Jain Lee,David P. Norton,S. J. Pearton,Fan Ren,Ivan I. Kravchenko +7 more
TL;DR: In this paper, an enhancement-mode amorphous indium gallium zinc oxide (α-IGZO) channel thin film transistors (TFTs) with a 6μm gate length and a 100 μm gate width were fabricated on glass substrates by rf magnetron sputtering near room temperature.
Journal ArticleDOI
Low-temperature solution-processed amorphous indium tin oxide field-effect transistors
Hyun Sung Kim,Myung-Gil Kim,Young-Geun Ha,Mercouri G. Kanatzidis,Tobin J. Marks,Antonio Facchetti +5 more
TL;DR: Amorphous indium tin oxide-based thin-film transistors (TFTs) were fabricated on various dielectrics by spin-coating an ITO film precursor solution consisting of InCl(3) and SnCl(4) as the sources of In(3+) and Sn(4+), respectively, methoxyethanol (solvent), and ethanolamine (base).
Journal ArticleDOI
Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application
Chur-Shyang Fuh,Po-Tsun Liu,Li-Feng Teng,Sih-Wei Huang,Yao Jen Lee,Han-Ping D. Shieh,Simon M. Sze +6 more
TL;DR: In this paper, a microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT) for flexible oxide TFT applications.
Journal ArticleDOI
The Materials Science of Functional Oxide Thin Films
TL;DR: In this paper, a review outlines the reasons underlying this sensitivity and recent results that demonstrate the levels of control which are now possible in the area of functional oxides for potential applications.
Journal ArticleDOI
12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors
Jae Kyeong Jeong,Jong Han Jeong,Hui Won Yang,Tae Kyung Ahn,Min-Kyu Kim,Kwang Suk Kim,Bon Seog Gu,Hyun-Joong Chung,Jin-Seong Park,Yeon-Gon Mo,Hye-Dong Kim,Ho Kyoon Chung +11 more
TL;DR: In this paper, a full-color 12.1-in.WXGA active-matrix organic-light-emitting-diode (AMOLED) display was demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an activematrix backplane.
References
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.