Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide
TL;DR: In this article, the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide was shown.
Journal ArticleDOI
Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature
Sang-Yun Sung,Se-Yun Kim,Kwang-Min Jo,Joon-Hyung Lee,Jeong-Joo Kim,Sang Gon Kim,Kyoung-hoon Chai,Stephen J. Pearton,David P. Norton,Young-Woo Heo +9 more
TL;DR: In this article, the authors investigated the use of copper oxides for active layer of p-channel field effect transistors (TFTs) in a p-type enhancement mode with an on/off ratio of ∼104 and field effect mobility of 0.4 cm2/V⋅s.
Journal ArticleDOI
Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses
TL;DR: In this article, the authors investigated the static and dynamic bias stress-induced charge trapping and detrapping phenomenon in amorphous indium-gallium-zinc oxide thin film transistors and derived a stretched-exponential equation to fit the time dependence of the threshold voltage shift during the stress and recovery phases under dynamic stresses.
Journal ArticleDOI
Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
TL;DR: It is suggested that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-igZO resistive switching cells were integrated with a- IGZOthin film transistors.
Journal ArticleDOI
Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition
TL;DR: It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology.
References
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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.