Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed Al x O y Gate Dielectric
Wensi Cai,Seonghyun Park,Jiawei Zhang,Joshua Wilson,Yunpeng Li,Qian Xin,Leszek A. Majewski,Aimin Song +7 more
TL;DR: In this paper, the morphology and electrical properties of the anodized, ultra-thin Al x O y film have been studied and several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodised at 2.3 V (~3 nm) exhibited the best performance.
Journal ArticleDOI
Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.
Si Joon Kim,Joohye Jung,Keun Woo Lee,Keun Woo Lee,Doo Hyun Yoon,Tae Soo Jung,Sreekantha Reddy Dugasani,Sung Ha Park,Hyun Jae Kim +8 more
TL;DR: A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed after double-crossover DNA nanostructures were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs.
Patent
Display Device and Method for Manufacturing the Same
TL;DR: In this paper, an object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element.
Journal ArticleDOI
Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
Se Yeob Park,Kwang Hwan Ji,Hong Yoon Jung,Ji In Kim,Rino Choi,Kyoung Seok Son,Myung Kwan Ryu,Sang Yoon Lee,Jae Kyeong Jeong +8 more
TL;DR: In this paper, the effect of oxygen (O2) high pressure annealing (HPA) on tin-doped indium oxide (ITO) thin film transistors (TFTs) was examined.
Journal ArticleDOI
High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer
Shiben Hu,Kuankuan Lu,Honglong Ning,Zheng Zeke,Zhang Hongke,Zhiqiang Fang,Rihui Yao,Miao Xu,Lei Wang,Linfeng Lan,Junbiao Peng,Xubing Lu +11 more
TL;DR: In this article, a high-mobility amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor with aluminum oxide (Al2O3) passivation layer by radio frequency (RF) magnetron sputtering and copper (Cu) source/drain electrodes is presented.
References
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
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