Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
Linfeng Lan,Junbiao Peng +1 more
TL;DR: In this article, an IGZO TFT based on anodic Al2O3 showed a mobility of 21.6 cm2/V·s, an on/off current ratio of as high as 108, and a threshold voltage of only 2 V.
Patent
Oxide semiconductor, thin film transistor, and display device
TL;DR: In this article, an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where m is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1.
Journal ArticleDOI
Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
Yuichiro Hanyu,Kay Domen,Kenji Nomura,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya +6 more
TL;DR: In this article, an experimental evidence that some hydrogens passivate electron traps in an amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO), was reported.
Journal ArticleDOI
Hydrogen anion and subgap states in amorphous In–Ga–Zn–O thin films for TFT applications
TL;DR: In this article, anionic hydrogens bonding to metal cations in amorphous In-Ga-Zn-O (a-IGZO) thin films for thin-film transistors (TFT) applications is reported.
Patent
Field effect transistor, display element, image display device, and system
TL;DR: In this paper, a disclosed field effect transistor includes a gate electrode to which a gate voltage is applied, a source and a drain electrode for acquiring a current in response to the gate voltage, an active layer provided adjacent to the source electrode and the drain electrode, the active layer being formed of an n-type oxide semiconductor, and a gate insulator layer provided between the gate electrode and active layer.
References
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Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.