Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Enhanced electrical characteristics and stability via simultaneous ultraviolet and thermal treatment of passivated amorphous In-Ga-Zn-O thin-film transistors.
Young Jun Tak,Doo Hyun Yoon,Seokhyun Yoon,Uy Hyun Choi,Mardhiah Muhamad Sabri,Byung Du Ahn,Hyun Jae Kim +6 more
TL;DR: A method to improve the electrical performance and stability of passivated amorphous In-Ga-Zn-O thin-film transistors by simultaneous ultraviolet and thermal (SUT) treatment is developed.
Journal ArticleDOI
Zn - In - O based thin-film transistors: Compositional dependence
TL;DR: The compositional dependence of sputter-deposited Zh-In-O (ZIO) film properties and the TFT performance was studied by means of a combinatorial technique as mentioned in this paper.
Journal ArticleDOI
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
Hyo Jin Kim,Se Yeob Park,Hong Yoon Jung,Byeong Geun Son,Chang Kyu Lee,Chul-Kyu Lee,Jong Han Jeong,Yeon-Gon Mo,Kyoung Seok Son,Myung Kwan Ryu,Sang Yoon Lee,Jae Kyeong Jeong +11 more
TL;DR: In this article, the effects of hydrogen incorporation in amorphous indium gallium zinc oxide (IGZO) TFTs on the performance and photo-bias stability of the resulting thin-film transistors were examined.
Patent
Memory Device and Semiconductor Device
Shunpei Yamazaki,Jun Koyama +1 more
TL;DR: In this paper, a memory device with a transistor which functions as a switching element for controlling supply, storage, and release of electrical charge in the memory element is presented. But the off-state current of the transistor is extremely low because an active layer thereof includes an oxide semiconductor.
Journal ArticleDOI
Effects of post-annealing on (110) Cu2O epitaxial films and origin of low mobility in Cu2O thin-film transistor
TL;DR: In this article, epitaxial (110) Cu2O films on MgO substrates were grown toward high-mobility p-channel oxide thin-film transistors (TFTs).
References
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
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TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.