Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer
Ho-young Jeong,Bok-young Lee,YoungJang Lee,Jung-Il Lee,Myoung-Su Yang,In-Byeong Kang,Mallory Mativenga,Jin Jang +7 more
TL;DR: In this paper, thermally stable coplanar amorphous-indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n+a-IZO source/drain regions were reported.
Journal ArticleDOI
Low-temperature fabrication of high performance indium oxide thin film transistors
TL;DR: In this paper, a solution-processed indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a single solvent system to minimize the carbon-based impurities.
Journal ArticleDOI
Flexible Self-Aligned Double-Gate IGZO TFT
Niko Munzenrieder,Pascal Voser,Luisa Petti,Christoph Zysset,Lars Büthe,Christian Vogt,Giovanni A. Salvatore,Gerhard Tröster +7 more
TL;DR: In this paper, a flexible double-gate (DG) thin-film transistors based on InGaZnO4 and fabricated on free standing plastic foil, using self-alignment (SA) is presented.
Journal ArticleDOI
Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors
Kyung Min Kim,Woong Hee Jeong,Dong Lim Kim,You Seung Rim,Yuri Choi,Myung-kwan Ryu,Kyung-Bae Park,Hyun Jae Kim +7 more
TL;DR: In this article, the authors proposed solution-processed AlInZnO (AIZO) and IZO dual-channel transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C.
Journal ArticleDOI
Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films
Soo Hyun Kim,In-Hwan Baek,In-Hwan Baek,Da Hye Kim,Jung Joon Pyeon,Jung Joon Pyeon,Taek-Mo Chung,Seung Hyub Baek,Jinsang Kim,Jeong Hwan Han,Seong Keun Kim +10 more
TL;DR: In this article, the authors demonstrate high performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD) and demonstrate that the SnO films grown at 210 °C still contain defects and hole carriers, especially near the back-channel surface.
References
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P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.