Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition
Flora M. Li,Bernhard C. Bayer,Stephan Hofmann,James Dutson,Steve Wakeham,Mike J. Thwaites,William I. Milne,Andrew J. Flewitt +7 more
TL;DR: Amorphous hafnium oxide (HfOx) is deposited by sputtering while achieving a very high k∼30 as mentioned in this paper, which is a consequence of a previously unreported cubic-like short range order in the amorphous HfOx.
Journal ArticleDOI
Zinc tin oxide based driver for highly transparent active matrix OLED displays
TL;DR: The first transparent active matrix OLED pixel drivers with ZTO channels are realized, suitable for see-through AM OLED displays with brightness levels of 2000 cd/m 2 at 100 Hz refresh rate and full-HD resolution.
Journal ArticleDOI
Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique
TL;DR: In this article, a universal mobility model is obtained using a field effect technique and capacitancevoltage method for thin-film transistors (TFTs) in next-generation flat-panel displays.
Journal ArticleDOI
Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature
TL;DR: In this article, the effects of gate insulators for oxide TFTs have been investigated by two types of a-IGZO TFT with high-k and low-k oxides.
Journal ArticleDOI
Rare-metal-free high-performance Ga-Sn-O thin film transistor
TL;DR: High-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In and were attributed to the elimination of weak Zn-O bonds.
References
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TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.