Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Thermal Conductivity of Amorphous Indium-Gallium-Zinc Oxide Thin Films
Toru Yoshikawa,Takashi Yagi,Nobuto Oka,Junjun Jia,Yuichiro Yamashita,Koichiro Hattori,Yutaka Seino,Naoyuki Taketoshi,Tetsuya Baba,Yuzo Shigesato +9 more
TL;DR: In this paper, the authors investigated the thermal conductivity of 200-nm-thick amorphous indium-gallium-zincoxide (a-IGZO) films.
Patent
Semiconductor Device and Method for Fabricating the Same
TL;DR: In this article, the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, and gate electrodes are in electrical contact through connectors with gate wirings formed from the second conductive layers.
Journal ArticleDOI
ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.
Dimitrios Afouxenidis,Riccardo Mazzocco,G. Vourlias,Peter J. Livesley,Anthony Krier,William I. Milne,William I. Milne,Oleg Kolosov,George Adamopoulos +8 more
TL;DR: The application of spray pyrolysis for the deposition and investigation of Al2x-1·TixOy dielectrics as a function of the [Ti(4+)]/[ Ti(4+)+2·Al(3+)] ratio and their implementation in thin film transistors employing spray-coated ZnO as the active semiconducting channels is reported.
Journal ArticleDOI
A Depletion-Mode a-IGZO TFT Shift Register With a Single Low-Voltage-Level Power Signal
TL;DR: In this paper, a depletionmode amorphous indium-gallium-zincoxide thin-film transistor (a-IGZO TFT) shift register was proposed and fabricated.
Patent
Thin film transistors using thin film semiconductor materials
TL;DR: In this article, the active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.
References
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TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.