Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Fundamentals of zinc oxide as a semiconductor
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Electronics based on two-dimensional materials
Gianluca Fiori,Francesco Bonaccorso,Giuseppe Iannaccone,Tomas Palacios,Daniel Neumaier,Alan Seabaugh,Sanjay K. Banerjee,Luigi Colombo +7 more
TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
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Past achievements and future challenges in the development of optically transparent electrodes
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References
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Journal ArticleDOI
Organic thin-film transistors: a review of recent advances
TL;DR: This paper review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
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Observation of two-dimensional discrete solitons in optically induced nonlinear photonic lattices
Jason W. Fleischer,Mordechai Segev,Mordechai Segev,Nikolaos K. Efremidis,Demetrios N. Christodoulides +4 more
TL;DR: This work uses optical induction, the interference of two or more plane waves in a photosensitive material, to create a 2D photonic lattice in which the solitons form, paving the way for the realization of a variety of nonlinear localization phenomena inPhotonic lattices and crystals.
Journal ArticleDOI
Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples
TL;DR: In this article, a working hypothesis for exploring optically transparent and electrically conducting amorphous oxides is proposed on the basis of simple considerations concerning chemical bonding, and three new materials are presented as examples.
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Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor
TL;DR: In this paper, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method, which exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature.
Journal ArticleDOI
Discrete Spatial Optical Solitons in Waveguide Arrays
TL;DR: In this paper, the authors reported the observation of discrete spatial optical solitons in an array of 41 waveguides, where light was coupled to the central waveguide and when sufficient power was injected, the field was localized close to the input waveguiders and its distribution was successfully described by the discrete nonlinear Schrodinger equation.