Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Amorphous oxide channel TFTs
TL;DR: In this paper, the authors used amorphous oxides of post-transition metals: indium, gallium, and zinc for the channel materials are fabricated with radio-frequency magnetron sputtering methods for the deposition of the channel and the gate insulator layers, at room temperature with no high-temperature post-deposition annealing process.
Journal ArticleDOI
Recent Progress and Future Prospects of 2D-Based Photodetectors
TL;DR: In this paper, the authors proposed a 2D photodetectors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures for high performance, low-cost, broadband sensing and imaging modalities.
Journal ArticleDOI
Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors.
Jonathan W. Hennek,Jeremy Smith,Aiming Yan,Myung-Gil Kim,Wei Zhao,Vinayak P. Dravid,Antonio Facchetti,Tobin J. Marks +7 more
TL;DR: It is concluded that the metal oxide lattice formation enthalpy (ΔH(L)) and metal ionic radius are the best predictors of IXZO oxygen getter efficacy.
Journal ArticleDOI
Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.
Xinge Yu,Jeremy Smith,Nanjia Zhou,Li Zeng,Peijun Guo,Yu Xia,Ana Alvarez,Stefano Aghion,Hui Lin,Junsheng Yu,Robert P. H. Chang,Michael J. Bedzyk,Rafael Ferragut,Tobin J. Marks,Antonio Facchetti +14 more
TL;DR: In this article, a spray-combustion synthesis (SCS) method was used to create high-performance, solution-processed metal-oxide (MO) semiconductors.
Journal ArticleDOI
Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
Jun Yao,Jian Lin,Yanhua Dai,Gedeng Ruan,Zheng Yan,Lei Li,Lin Zhong,Lin Zhong,Douglas Natelson,James M. Tour +9 more
TL;DR: This work presents a route to fabricate highly transparent memory using SiO(x) as the active material and indium tin oxide or graphene as the electrodes, and two-terminal, nonvolatile resistive memory can be configured in crossbar arrays on glass or flexible transparent platforms.
References
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.