Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
More filters
Journal ArticleDOI
Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation
TL;DR: In this article, the effect of Gd doping on the structural properties of solution processed, crystalline In2O3 for thin-film transistor (TFT) application was studied.
Patent
Semiconductor device, manufacturing method thereof, and electronic device
Motomu Kurata,Shinya Sasagawa,Hodo Ryota,Katsuaki Tochibayashi,Moriwaka Tomoaki,Jiro Nishida,Hidekazu Miyairi,Shunpei Yamazaki +7 more
TL;DR: In this paper, the authors describe a semiconductor device with a first layer including a first transistor, a second layer including first insulating film over the first layer, a third layer including second insulating films over the second layer, and a fourth layer including an oxide semiconductor over the third layer.
Journal ArticleDOI
Role of silicon in silicon-indium-zinc-oxide thin-film transistor
TL;DR: In this article, the performance of amorphous silicon-indium-zincoxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature.
Patent
Display device including transistor and manufacturing method thereof
TL;DR: In this article, an oxide semiconductor layer is used for a channel formation region, and a gate electrode is provided over at least a transistor which is applied to a driver circuit.
Journal ArticleDOI
Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing
Gaokuo Zhong,Zi Mengfei,Zi Mengfei,Chuanlai Ren,Chuanlai Ren,Qun Xiao,Qun Xiao,M. H. Tang,M. H. Tang,Liyu Wei,Feng An,Feng An,Shuhong Xie,Jinbin Wang,Xiangli Zhong,Mingqiang Huang,Jiangyu Li,Jiangyu Li +17 more
TL;DR: This work demonstrates an all-inorganic flexible artificial synapse enabled by a ferroelectric field effect transistor based on mica that exhibits excellent electrical pulse modulated conductance updating for synaptic functions and shows remarkable mechanical flexibility and high temperature reliability, making robust neuromorphic computation possible under external disturbances such as stress and heating.
References
More filters
Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.