Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors
Journal ArticleDOI
Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics
Qing Cao,Seung Hyun Hur,Zhengtao Zhu,Yugang Sun,Congjun Wang,Matthew Meitl,Moonsub Shim,John A. Rogers +7 more
TL;DR: In this article, the authors report the use of networks of single-walled carbon nanotubes (SWNTs) with high and moderate coverages for all of the conducting (i.e., source, drain, and gate electrodes) and semiconducting layers, respectively, of a type of transparent, mechanically flexible, thin-film transistor (TFT).
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A transparent, flexible, low-temperature, and solution-processible graphene composite electrode
TL;DR: In this article, the synthesis and preparation of a new type of graphene composite material suitable for spin-coating into conductive, transparent, and flexible thin film electrodes in ambient conditions is reported.
Journal ArticleDOI
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
TL;DR: In this article, a review on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness is presented.
Journal ArticleDOI
Flexible polydimethylsiloxane/multi-walled carbon nanotubes membranous metacomposites with negative permittivity
Kai Sun,Kai Sun,Kai Sun,Peitao Xie,Zhongyang Wang,Tongming Su,Qian Shao,Jong Eun Ryu,Xi-hua Zhang,Jiang Guo,Akash Shankar,Jianfeng Li,Runhua Fan,Dapeng Cao,Zhanhu Guo +14 more
TL;DR: In this paper, the conductivity and the complex permittivity were investigated in flexible polydimethylsiloxane (PDMS)/multi-walled carbon nanotubes (MWCNTs) membranous nanocomposites, which were fabricated via in-situ polymerization process.
References
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.