Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Solution-processed InGaZnO-based thin film transistors for printed electronics applications
Jun Hyung Lim,Jong Hyun Shim,Jun Hyuk Choi,Jinho Joo,Kyung Park,Haseok Jeon,Mi Ran Moon,Donggeun Jung,Hyoungsub Kim,Hoo-Jeong Lee +9 more
TL;DR: In this paper, the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors was reported.
Journal ArticleDOI
Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors
TL;DR: In this article, an analysis of electrical bias stress instability in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is presented.
Journal ArticleDOI
MoS2–InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity
Jaehyun Yang,Hyena Kwak,Youngbin Lee,Yu Seon Kang,Mann Ho Cho,Jeong Ho Cho,Yong-Hoon Kim,Seong Jun Jeong,Seongjun Park,Hoo Jeong Lee,Hyoungsub Kim +10 more
TL;DR: The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route.
Patent
Amorphous oxide and field effect transistor
TL;DR: In this article, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to Zn and O (N/(N+O)) in the amomorphous oxide is equal to or larger than 0.01 atomic percent and equal to smaller than 3 atomic percent.
Patent
Photosensor and display device
Yasuo Nakamura,Yoshifumi Tanada +1 more
TL;DR: In this article, thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are arranged in a matrix over a large substrate and have small characteristic variations.
References
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.