Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Proceedings ArticleDOI
High performance oxide thin film transistors with double active layers
Sunil Kim,Chang Jung Kim,Jae Chul Park,I-hun Song,Sang-Wook Kim,Huaxiang Yin,Eunha Lee,Jae-chul Lee,Youngsoo Park +8 more
TL;DR: In this article, the authors integrated the high performance oxide thin film transistors with double active layers, and the active layer is composed of IZO (or ITO) and GIZO layers.
Journal ArticleDOI
Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.
TL;DR: This progress report aims to provide a basic understanding of CuI‐based materials and recent progress in the development of various devices, including transparent electrodes, thermoelectric devices, p–n diodes, p‐channel transistors, light emitting diods, and solar cells.
Journal ArticleDOI
Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment
Sang-Wook Kim,Jae-Chul Park,Chang-Jung Kim,I-hun Song,Sunil Kim,Sung-Ho Park,Huaxiang Yin,Hyung-Ik Lee,Eunha Lee,Youngsoo Park +9 more
TL;DR: In this paper, the source/drain region of amorphous GaInZnO thin-film transistor with self-aligned top-gate structure was defined by simple NH3 plasma treatment instead of complicated processes, such as ion implantation and activation.
Journal ArticleDOI
Fully Integrated Indium Gallium Zinc Oxide NO2 Gas Detector
Mani Teja Vijjapu,Sandeep G. Surya,Saravanan Yuvaraja,Xixiang Zhang,Husam N. Alshareef,Khaled N. Salama +5 more
TL;DR: The developed IGZO microsystem not only quantifies NO2 gas concentration but also yields a 5-bit digital output, which paves the way for inexpensive toxic gas monitoring systems.
Journal ArticleDOI
Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process
Andrew J. Flewitt,James Dutson,Paul Beecher,Debjani Paul,Steve Wakeham,M E Vickers,Caterina Ducati,S.P. Speakman,William I. Milne,Mike J. Thwaites +9 more
TL;DR: In this article, a novel rf sputtering technology in which a high density plasma is created in a remote chamber has been used to reactively deposit zinc oxide and indium zinc oxide (IZO) thin films at room temperature from metallic sputtering targets at deposition rates ∼50 nm min −1, which is approximately an order of magnitude greater than that of rf magnetron sputtering.
References
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Journal ArticleDOI
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