Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit.
TL;DR: The effects of mid–layer Ag and top FTO layer on the structural, electrical and optical properties of FTO/Ag/FTO multilayered composite structures deposited on quartz glass substrates by magnetron sputtering at 100 °C have been investigated.
Journal ArticleDOI
Ammonia gas sensor based on pentacene organic field-effect transistor
TL;DR: In this paper, bottom contact organic field effect transistors (OFETs) were created using pentacene as an active layer and polymerthylmethacrylate (PMMA) as an insulator.
Journal ArticleDOI
Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation
TL;DR: In this paper, the electronic properties of single and multication transparent conducting oxides (TCOs) were investigated using first-principles density-functional approach, and the results not only explain the experimentally observed trends in the electrical conductivity in single-cation TCO, but also demonstrate that multicomponent oxides may offer a way to overcome the electron localization bottleneck which limits the charge transport in wide band-gap main-group metal oxides.
Journal ArticleDOI
High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance
Sung Youb Kim,Kukjoo Kim,Young Hwan Hwang,Jong Hyun Park,Ji-Wook Jang,Yunyong Nam,Yesung Kang,Minsoo Kim,Hyo Ju Park,Zonghoon Lee,Jaehyouk Choi,Youngmin Kim,Sijeong Jeong,Byeong-Soo Bae,Jang Ung Park +14 more
TL;DR: Electrohydrodynamic inkjet technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V-1 s-1) is described.
Journal ArticleDOI
Novel Electronics for Flexible and Neuromorphic Computing
Han Eol Lee,Jung-Hwan Park,Tae Jin Kim,Doyoung Im,Jung Ho Shin,Do Hyun Kim,Baker Mohammad,Il-Suk Kang,Keon Jae Lee +8 more
TL;DR: Here, representative advances and developments in the area of flexible and neuromorphic technologies are reviewed with regard to device configurations, materials, fabrication processes, and their potential research fields.
References
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.