Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
Citations
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Journal ArticleDOI
Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor/Graphene Heterointerface.
Chih-Jen Shih,Raphael Pfattner,Yu-Cheng Chiu,Nan Liu,Ting Lei,Desheng Kong,Yeongin Kim,Ho-Hsiu Chou,Won-Gyu Bae,Zhenan Bao +9 more
TL;DR: It is reported the first experimental evidence that the partially screened field effect and selective carrier injection through graphene dominate the electronic transport at the organic semiconductor/graphene heterointerface.
Journal ArticleDOI
Flexible diodes for radio frequency (RF) electronics: a materials perspective
James Semple,Dimitra G. Georgiadou,Gwenhivir Wyatt-Moon,G Gerwin Gelinck,Thomas D. Anthopoulos,Thomas D. Anthopoulos +5 more
TL;DR: In this paper, the authors summarized the progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects, and presented their outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein.
Journal ArticleDOI
Density-functional theory guided advances in phase-change materials and memories
Wei Zhang,Volker L. Deringer,Richard Dronskowski,Riccardo Mazzarello,Evan Ma,Matthias Wuttig +5 more
TL;DR: In this article, the authors review how density functional theory (DFT) is advancing the understanding of phase-change materials (PCMs) and describe key DFT insights into structural, electronic, and bonding properties of PCMs and into technologically relevant processes such as fast crystallization and relaxation of the amorphous state.
Journal ArticleDOI
Effect of SiO 2 and SiO 2 /SiN x Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity
Delwar Hossain Chowdhury,Mallory Mativenga,Jae Gwang Um,Ravi K. Mruthyunjaya,Gregory N. Heiler,Timothy J. Tredwell,Jin Jang +6 more
TL;DR: In this article, the authors studied the environmental stability of amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO2) and bilayer passivation under highhumidity (80%) storage.
Journal ArticleDOI
Preparation on transparent flexible piezoelectric energy harvester based on PZT films by laser lift-off process
TL;DR: In this paper, the piezoelectric energy generation properties of transparent flexible devices (TFD) based on PbZr 0.52 Ti 0.48 O 3 (PZT) films, which were fabricated by laser lift-off (LLO) process, were studied for a PZr energy harvester.
References
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Journal ArticleDOI
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