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Qi Liu
Researcher at Fudan University
Publications - 494
Citations - 16543
Qi Liu is an academic researcher from Fudan University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 55, co-authored 433 publications receiving 11785 citations. Previous affiliations of Qi Liu include Chinese Academy of Sciences & Anhui University.
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Journal ArticleDOI
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.
TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.
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Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
TL;DR: It is found that CFs are found to start growing from the anode rather than having to reach the cathode and grow backwards, and a new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Qi Liu,Qi Liu,Shibing Long,Hangbing Lv,Wei Wang,Wei Wang,Jiebin Niu,Zongliang Huo,Junning Chen,Ming Liu +9 more
TL;DR: A novel approach to resolve this challenge by adopting a metal nanocrystal (NC) covered bottom electrode (BE) to replace the conventional ReRAM BE, which can control CF nucleation and growth to provide superior uniformity of RS properties.
Journal ArticleDOI
Two-dimensional materials for next-generation computing technologies.
Chunsen Liu,Huawei Chen,Shuiyuan Wang,Qi Liu,Qi Liu,Yu-Gang Jiang,David Wei Zhang,Ming Liu,Ming Liu,Peng Zhou +9 more
TL;DR: The opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies, from the perspective of matrix and logic computing, are discussed.