Soitec

About: Soitec is a company organization based out in Bernin, France. It is known for research contribution in the topics: Layer (electronics) & Silicon on insulator. The organization has 589 authors who have published 1062 publications receiving 13737 citations. The organization is also known as: Soitec (France).

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Abstract: The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I ON / I OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.

Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer

Abstract: Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the substrate using the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control a strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material.

FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond

Abstract: Multiples technology nodes in production are now based on FD-SOI thin film substrates. The development of these substrates has required several technical innovations (SmartCut process adaptation, new metrology introduction), which are discussed in this paper.

Hybrid structure for a surface acoustic wave device

Abstract: The invention relates to a hybrid structure (100) for a surface acoustic wave device, comprising a useful layer (10) of piezoelectric material having a first free surface (1) and a second surface (2) disposed on a support substrate (20) that has a lower coefficient of thermal expansion than that of the useful layer (10) The hybrid structure is characterised in that the useful layer (10) comprises an area (30) of nanocavities (31)

Method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate

Abstract: A method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 μm and 600 μm.