Institution
Soitec
Company•Bernin, France•
About: Soitec is a company organization based out in Bernin, France. It is known for research contribution in the topics: Layer (electronics) & Silicon on insulator. The organization has 589 authors who have published 1062 publications receiving 13737 citations. The organization is also known as: Soitec (France).
Papers published on a yearly basis
Papers
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10 citations
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29 Oct 2009TL;DR: In this article, a method for producing a structure having an ultra thin buried oxide (UTBOX) layer by assembling a donor substrate with a receiver substrate wherein at least one of the substrates includes an insulating layer having a thickness of less than 50 nm that faces the other substrate, conducting a first heat treatment for reinforcing the assembly between the two substrates at temperature below 400° C, and conducting a second heat treatment at temperature above 900° C.
Abstract: A method for producing a structure having an ultra thin buried oxide (UTBOX) layer by assembling a donor substrate with a receiver substrate wherein at least one of the substrates includes an insulating layer having a thickness of less than 50 nm that faces the other substrate, conducting a first heat treatment for reinforcing the assembly between the two substrates at temperature below 400° C., and conducting a second heat treatment at temperature above 900° C., wherein the exposure time between 400° C. and 900° C. between the heat treatments is less than 1 minute and advantageously less than 30 seconds.
10 citations
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02 May 2011TL;DR: In this paper, an evolutionary approach to SmartCutTM technology is presented, which already allows achieving a maximum total total SOI layer thickness variation of less than ± 10 A on preproduction volume.
Abstract: Thickness uniformity of the Ultra Thin SOI (UTSOI) substrates is one of the key criteria to control Vt variation of the planar FDSOI devices. We present an evolutionary approach to SmartCutTM technology which already allows achieving a maximum total SOI layer thickness variation of less than ± 10 A on preproduction volume. Total thickness variation of ± 5 A is targeted.
10 citations
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23 Jan 2009TL;DR: In this paper, a method for bonding two substrates, in particular two semiconductor substrates which, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates.
Abstract: The invention relates to a method for bonding two substrates, in particular two semiconductor substrates which, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates The invention also relates to a corresponding bonding equipment
10 citations
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TL;DR: In this paper, temperature-dependent contact resistivity and high-temperature stability of annealed Ni/Au ohmic contacts to p-type GaN in air was investigated.
Abstract: We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
10 citations
Authors
Showing all 590 results
Name | H-index | Papers | Citations |
---|---|---|---|
Michael R. Krames | 65 | 321 | 18448 |
Bich-Yen Nguyen | 47 | 273 | 6557 |
Iuliana Radu | 37 | 237 | 5026 |
George K. Celler | 36 | 233 | 5964 |
Andreas Gombert | 31 | 176 | 3597 |
Fabrice Letertre | 29 | 180 | 2707 |
Bruno Ghyselen | 28 | 175 | 2943 |
Kiyoshi Mitani | 26 | 122 | 1966 |
Bernard Aspar | 25 | 99 | 1910 |
Mariam Sadaka | 25 | 98 | 1780 |
Stefan Degroote | 24 | 93 | 2335 |
Konstantin Bourdelle | 24 | 132 | 2236 |
Joff Derluyn | 23 | 75 | 1877 |
Carlos Mazure | 20 | 151 | 1552 |
Philippe Flatresse | 20 | 73 | 1175 |