Soitec

About: Soitec is a company organization based out in Bernin, France. It is known for research contribution in the topics: Layer (electronics) & Silicon on insulator. The organization has 589 authors who have published 1062 publications receiving 13737 citations. The organization is also known as: Soitec (France).

Sram-type memory cell

Abstract: An SRAM-type memory cell that includes a semiconductor on insulator substrate having a thin film of semiconductor material separated from a base substrate by an insulating layer; and six transistors such as two access transistors, two conduction transistors and two charge transistors arranged so as to form with the conduction transistors two back-coupled inverters. Each of the transistors has a back control gate formed in the base substrate below the channel and able to be biased in order to modulate the threshold voltage of the transistor, with a first back gate line connecting the back control gates of the access transistors to a first potential and a second back gate line connecting the back control gates of the conduction transistors and charge transistors to a second potential. The first and second potentials can be modulated according to the type of cell control operation.

Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate

Abstract: This letter presents radio frequency (RF) characterization of flexible microwave switches using single-crystal silicon nanomembranes (SiNMs) on plastic substrate under various uniaxial mechanical tensile bending strains. The flexible switches shows significant/negligible performance enhancement on strains under on/off states from dc to 10 GHz. Furthermore, an RF/microwave strain equivalent circuit model is developed and reveals the most influential factors, and un-proportional device parameters change with bending strains. The study demonstrates that flexible microwave single-crystal SiNM switches, as a simple circuit example towards the goal of flexible monolithic microwave integrated circuits, can be properly operated and modeled under mechanical bending conditions.

SIMOX — a new challenge for ion implantation

Abstract: Silicon On Insulator technologies have reached a degree of maturity with the SIMOX technology based on oxygen ion implantation. Since 1990, some rad-hard and space oriented product like SRAMs have been produced demonstrating the manufacturability of this new technology for high complexity ICs. Additionally, commercial applications on SOI have started to emerge, with the low voltage high speed market appearing to be the most promising. For this market, a low dose SIMOX process has been developed with two major advantages: a reduction in cost and a better crystalline quality. In the process optimisation described, not only the dose but also the energy can be lowered; a complete change of design of the oxygen implantation machine is then possible.

Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer

Abstract: The invention provides a data-path cell specifically adapted to its environment for use in an integrated circuit produced on a semiconductor-on-insulator (SeOI) substrate. The data-path cell includes an array of field-effect transistors, each transistor having a source region, a drain region and a channel region formed in the thin semiconductor layer of the SeOI substrate, and further having a front gate control region formed above the channel region. In particular, one or more transistors of the data-path cell further includes a back gate control region formed in the bulk substrate beneath the channel region and configured so as to modify the performance characteristics of the transistor in dependence on its state of bias. Also, an integrated circuit including one or more of the data-path cells and methods for designing or driving these data-path cells.

Multi-Scale Thickness and Roughness Characterization of Thin Silicon-On-Insulator Films

Abstract: Thickness uniformity of the silicon top layer is extremely important for the next generation of CMOS electronics based on FullyDepleted Silicon-On-Insulator (FD-SOI) wafers. It requires accurate thickness characterization over a wide spatial bandwidth, from transistor to wafer scales [10 nm-300 mm]. We propose a data processing method using one-dimensional Power Spectral Density functions to describe both roughness and thickness variations of thin layers over the bandwidth of interest. The study of the correlation between thickness and roughness of the silicon top layer of SOI wafers leads to the distinction of three spectral domains: high-frequencies, where thickness variations are larger than roughness variations, mid-frequencies, where thickness and roughness variations are comparable, and low-frequencies, where the top layer conformably follows the buried oxide roughness. Furthermore, the spectral analysis of thickness variations, points out fractal behaviors over three regions (scaling exponent 0.3, 1.2 and 0.2 respectively). These regions provide the spectral foot-prints of fracture propagation [1.10 −5 −2.10 −3 μm −1 ], surface self-diffusion [0.3−1 μm −1 ] and sacrificial oxidation [1−10 μm −1 ] respectively, all phenomena involved in fabrication of SOI wafers by the ion-cut process. Additionally, over the mid-frequencies region [0.03−1 μm −1 ], we observe a “bump” which results