Soitec

About: Soitec is a company organization based out in Bernin, France. It is known for research contribution in the topics: Layer (electronics) & Silicon on insulator. The organization has 589 authors who have published 1062 publications receiving 13737 citations. The organization is also known as: Soitec (France).

22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale

Abstract: Beyond 65FD-SOI, 28FD-SOI, 22FD-SOI production granted technologies, continuous SmartCutTM development support advanced SOI requirements. To improve SOI layer thickness variability, a 2nd generation chemical thinning process step is proposed. 11% and 25% improvements are demonstrated on 100% and on 75% of the wafer surface, respectively. This improved product is ready for pre-production.

Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters

Abstract: A method for manufacturing a plurality of crystalline semiconductor islands having different lattice parameters includes providing a relaxation substrate comprising a support and a flow layer on the support that includes first and second groups of blocks having different viscosities at a relaxation temperature. The relaxation substrate also comprises a plurality of strained crystalline semiconductor islands on the flow layer, the islands of a first group being located on the first group of blocks and islands of a second group being located on the second group of blocks. The relaxation substrate is then heat treated at a relaxation temperature higher than or equal to the glass transition temperature of at least one block of the flow layer to cause differentiated lateral expansion of the first and second groups of islands such that the first and second groups of relaxed islands then have different lattice parameters.

Method for fabrication of a semiconductor structure including an interposer free from any through via

Abstract: A method of forming a semiconductor structure includes introducing, at selected conditions, hydrogen and helium species (e.g., ions) in a temporary support to form a plane of weakness at a predetermined depth therein, and to define a superficial layer and a residual part of the temporary support; forming on the temporary support an interconnection layer; placing at least one semiconductor chip on the interconnection layer assembling a stiffener on a back side of the at least one semiconductor chip; and providing thermal energy to the temporary support to detach the residual part and provide the semiconductor structure. The interconnection layer forms an interposer free from any through via.

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates

Abstract: In this study, high-resistivity gold-implanted silicon substrates developed for radio frequency (RF) applications were characterized. By varying PICTS (Photo-Induced Current Transient Spectroscopy) measurement conditions such as the illumination wavelength, we identified the signature and the nature of four dominant traps. Two were electron traps and the others were hole traps. All of the related defects involved gold atoms. RF simulations of coplanar waveguide transmission lines integrated on these substrates were carried out, based on the trap properties extracted from PICTS results. A good agreement between RF experimental data and simulations was achieved by tuning the trap concentrations. Finally, the gold density extracted from the fit was successfully compared with the secondary ion mass spectrometry profile and an explanation of the role of the traps in RF behavior of the substrate was given.

In Situ Characterization of Grid-Connected CPV Systems

Abstract: A formula is proposed that characterizes the hourly AC power output of a passively-cooled Concentrator Photovoltaic (CPV) system in terms of 6 easily-determined system parameters and 4 measured or computed environmental variables. The model was tested on a grid-connected Soitec CPV system at Sede Boqer in the Negev Desert of Israel and found to be accurate to within typically ± 5% for any given hour of the year.