Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
2D quantum mechanical device modeling and simulation: Centre-channel (CC) and double-gate (DG) MOSFET
K.-D. Kim,Taeyoung Won +1 more
TL;DR: In this paper, a novel device structure (Si1−−−x Ge x /Si/Si 1−−-x Ge X hetero-structure), which is named as "center-channel (CC) double-gate (DG) MOSFET", is proposed.
Proceedings ArticleDOI
Effect of spacer dielectric of asymmetric underlap double gate MOSFET on SRAM performance
TL;DR: In this paper, the role of high-κ spacer of asymmetric underlap double gate MOS transistor on SRAM performance is systematically investigated with the help of two-dimensional device simulator.
Novel Structure Oriented Compact Model and Scaling Rule for Next Generation Power Semiconductor Devices
TL;DR: In this paper, an accurate compact model development for the trench gate IGBT was achieved for the first time in the world by analyzing in detail the principle operation of the IGBT.
Proceedings ArticleDOI
Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices
TL;DR: In this article, the impact of gate length (Lg) on the performance of InGaAs/InAs/inGaAs Composite Channel DMDG-HEMT devices for high frequency applications is investigated.
Journal ArticleDOI
GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET
Taeeon Park,Jihwan Kwak,Hongjoon Ahn,Jinwoong Lee,Jaehyuk Lim,Sangho Yu,Changhwan Shin,Taesup Moon +7 more
TL;DR: In this paper , a generative adversarial network (GAN) is proposed to estimate the LER-induced random variations of the transistor's electrical characteristics during fabrication of Fin-shaped Field Effect Transistor (FET).
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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