Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
Reads0
Chats0
TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
More filters
Proceedings ArticleDOI
Modeling of temperature effects on nano-CMOS devices with the predictive technologies
Ranjith Kumar,Volkan Kursun +1 more
TL;DR: In this article, the impact of technology scaling on the temperature fluctuation induced variation of the device parameters is illustrated and the parameters that model the temperature effects of the predictive technologies are compared, and the authors indicate that the device and circuit characterization with the PTMs may not be reliable at temperatures other than a single nominal temperature where the critical model parameters are extracted.
Proceedings ArticleDOI
Hierarchical TCAD device simulation of FinFETs
TL;DR: A physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
Journal ArticleDOI
Threshold-voltage variability analysis and modeling for junctionless double-gate transistors
TL;DR: This study suggests that when T Si is less than 4 nm, the threshold voltage becomes less sensitive to film thickness variation, partly due to quantum confinement.
Journal ArticleDOI
Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET
Subir Kumar Maity,Soumya Pandit +1 more
TL;DR: In this paper, the effect of scaling the thickness of the buried oxide (BOX) region and varying the dielectric constant of BOX material on the electrostatic integrity, analogue/radio frequency (RF) performance and circuit performance of InGaAs-on-Insulator device is investigated.
Dissertation
Étude des propriétés physiques et nouvelle modélisation SPICE des transistors FLIMOS de puissance
TL;DR: In this paper, the authors propose an approche analytique permettant d'estimer the tension de claquage, the resistance passante specifique and les capacites interelectrodes of the FLOating Islands MOSFET.
References
More filters
Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
Related Papers (5)
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more