Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wide temperature range
D.-S. Jeon,D.E. Burk +1 more
TL;DR: A physically based semi-empirical model for electron mobilities of the MOSFET inversion layers that is valid over a large temperature range (77 K > ) is presented in this article.
Journal ArticleDOI
A Full-Range Drain Current Model for Double-Gate Junctionless Transistors
TL;DR: In this article, a drain current model for long-channel double-gate junctionless transistors was derived by extending the concept of parabolic potential approximation for the subthreshold and the linear regions.
Journal ArticleDOI
Extraction of experimental mobility data for MOS devices
TL;DR: In this paper, a least squares curve fitting technique was employed to combine theoretical models of inversion layer charge and surface mobility to obtain an accurate value of surface threshold voltage, which was then used to calculate the experimental mobility.
Journal ArticleDOI
Physically-based threshold voltage determination for MOSFET's of all gate lengths
TL;DR: In this article, a reliable method to determine the threshold voltage V/sub th/ for MOSFETs with gate length down to the sub-0.1 /spl mu/m region is proposed.
Journal ArticleDOI
Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors
Amador Pérez-Tomás,Pierre Brosselard,Phillippe Godignon,José Antonio Alloza Millán,Narcis Mestres,Michael R. Jennings,James A. Covington,Philip Mawby +7 more
TL;DR: In this paper, a physically based channel mobility model has been developed to investigate the temperature dependence of the field-effect mobility of 4H-SiC metal-oxide-semiconductor (MOS) transistors with thermally oxidized gate insulators.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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