Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
Localized Charge-Dependent Threshold Voltage Analysis of Gate-Material-Engineered Junctionless Nanowire Transistor
TL;DR: In this paper, the impact of localized charges on channel potential, bandgap energy, and threshold voltage of junctionless nanowire transistor (JNT) has been investigated and four different localized charge density profiles have been used to evaluate the performance degradation.
Journal ArticleDOI
Unified bulk mobility model for low- and high-field transport in silicon
TL;DR: In this paper, an analytical bulk mobility model for hydrodynamic transport equations is developed from a microscopic level and designed for silicon device simulation, based on Kohler's variational method extended to the regime of nonlinear transport yields the general expression for the mobility as function of carrier temperature, lattice temperature and doping.
Proceedings ArticleDOI
Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS
TL;DR: In this article, the Schrodinger equation is solved, retaining a large number of eigenstates, which are then used to build a modified classical distribution accounting for the high energy part of the distribution.
Journal ArticleDOI
In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation
TL;DR: In this article, simulation of germanium-on-insulator fully-depleted pMOSFETs has been performed from process to device using 2D Silvaco software and compared with experimental results.
Proceedings ArticleDOI
Channel-carrier mobility parameters for 4H SiC MOSFETs
Handoko Linewih,Sima Dimitrijev +1 more
TL;DR: In this article, mobility parameters for n-channel 4H SiC MOSFETs are extracted and implemented into 2D device simulation program and SPICE circuit simulator, and the effects of interface-trap density on the model parameters are discussed.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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