Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design
TL;DR: A detailed analysis about the impact of fin height and width on various performances including the dc as well as ac FOMs can be of great help to device engineers in designing 3-D devices as per their requirement.
Journal ArticleDOI
On surface roughness-limited mobility in highly doped n-MOSFET's
TL;DR: In this paper, the authors assess the links between the functional dependencies of the electron surface roughness-limited mobility and the morphology of the interface and highlight that as the channel doping increases, the surface roughened mobility features a roll-off in the low effective field region, similar to the one due to the Coulomb limited mobility.
Journal ArticleDOI
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
TL;DR: In this article, the numerical properties of a deterministic Boltzmann equation solver based on a spherical harmonics expansion of the distribution function are analyzed and improved, where stable equations are obtained based on the H-transformation.
Journal ArticleDOI
A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface
TL;DR: In this paper, a compact electron mobility model based on the well-established Lombardi mobility model was proposed to reproduce the mobility degradation commonly observed in these SiC devices using 2D electrical simulations along with the proposed model and taking into account interface traps Coulomb scattering.
Journal ArticleDOI
Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.
TL;DR: In this paper, the authors demonstrate the shortest transistor channel length (17 nm) fabricated on a vapor−liquid−solid (VLS) grown silicon nanowire (NW) by a controlled reaction with Ni leads on an in situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 °C.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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