Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
Comprehensive and detailed study on the modeling of commercial SiC power MOSFET devices using TCAD
TL;DR: In this paper, the main scattering mechanisms degrading the channel mobility and the typical performance of a SiC power MOSFET are reviewed and the Poisson equation within the drift-diffusion model is able to account for the effects of ionized impurity scattering.
Journal ArticleDOI
Gate-Field Engineering and Source/Drain Diffusion Engineering for High-Performance Si Wire GAA MOSFET and Low-Power Strategy in Sub-30-nm-Channel Regime
TL;DR: In this article, the authors reconsiders the design methodology of the short-channel gate-all-around (GAA) silicon-on-insulator (SOI) MOSFET and proposes an advanced concept that offers enhanced performance.
Proceedings ArticleDOI
TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction
Marie-Anne Jaud,P. Scheiblin,Sebastien Martinie,Mikael Casse,Olivier Rozeau,J. Dura,J. Mazurier,Alain Toffoli,Olivier Thomas,Francois Andrieu,Olivier Weber +10 more
TL;DR: In this article, the authors present TCAD simulations based on advanced mobility modeling including Surface Roughness (SR) and Remote Coulomb Scattering (RCS) effects, quantum correction and short channel effects.
Journal ArticleDOI
Electrical performance study of 25nm Ω-FinFET under the influence of gamma radiation: A 3D simulation
TL;DR: It is found that @W-FinFET delivers better performance under irradiation as compared with conventional single gate MOS structures and Sentaurus simulation results obtained has been compared with the reported experimental data.
Journal ArticleDOI
Mobility Modeling Considerations for Radiation Effects Simulations in Silicon
Daniel J. Cummings,Arthur F. Witulski,Hyunwoo Park,Ronald D. Schrimpf,Scott E. Thompson,Mark E. Law +5 more
TL;DR: In this paper, the authors present an approach to model the electron and hole mobility at high-injection levels for single-event upset simulations due to the large number of electron-hole pairs generated along a particle strike path.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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