Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
Reads0
Chats0
TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
More filters
Journal ArticleDOI
“Universal” effective mobility of empirical local mobility models for n- and p-channel silicon MOSFETs
TL;DR: In this paper, the authors investigated the relationship between the effective field and the local mobility models employed in drift-diffusion device simulators, and showed that not all local models agree with the empirical universal mobility behavior for both n -channel and p -channel MOSFETs when the simulated results are interpreted as experimental data.
Journal ArticleDOI
Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation
TL;DR: In this paper, an electro-thermal simulation of a PIN-diode based on the finite-element method is presented, which shows a non-uniform temperature distribution inside the device during switching transients.
Silicon detectors for particle tracking at future high-energy physics experiments
TL;DR: In this paper, an experimental setup has been built for the test of a large size prototype, featuring 1 million pixels distributed on an area of 3.5 cm2, and tests have been performed both with a radioactive source, for the calibration of the detector charge-to-voltage conversion gain, and with electron beams in order to study the detector tracking capabilities.
Journal ArticleDOI
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs
TL;DR: Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations.
References
More filters
Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
Related Papers (5)
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more