Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Proceedings ArticleDOI
Optimizing nanoscale MOSFET architecture for low power analog/RF applications
TL;DR: In this article, the authors report on possible ways of improving analog/RF performance metrics through device structure optimization, through underlap source/drain (S/D) design and junctionless transistor architecture.
Journal ArticleDOI
Design Optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
N. A. F. Othman,Sharidya Rahman,Sharifah Wan Muhamad Hatta,Norhayati Soin,Brahim Benbakhti,S. J. Duffy +5 more
TL;DR: In this paper, the performance of the traditional AlGaN/GaN HEMT device has been comprehensively conducted in achieving improved performance and current handling capability using the Synopsys Sentaurus TCAD tool.
SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW
TL;DR: In this paper, the authors examined the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator from ISE Corporation.
Proceedings ArticleDOI
Modeling of Threshold Voltage and Subthreshold Current for P-Channel Symmetric Double-Gate MOSFET in Nanoscale Regime
Rekib Uddin Ahmed,Prabir Saha +1 more
TL;DR: Analytical threshold voltage and subthreshold current model for lightly-doped p-channel symmetric Double-Gate (DG) MOSFET in nanoscale regime and physical effect like surface roughness scattering has been incorporated in the subth threshold current model.
DissertationDOI
Modelagem, simulação e caracterização elétrica da associação série assimétrica de transistores SOI
TL;DR: In this article, the analog performance of the asymmetric self-cascode (ASC) composed by planar and multi-gate transistors in Silicon-On-Insulator (SOI) technology is investigated.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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