Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
Carrier Lifetime Analysis by Photoconductance Decay and Free Carrier Absorption Measurements
H.-J. Schulze,A. Frohnmeyer,Franz Josef Niedernostheide,F. Hille,P. Tütto,T. Pavelka,Gerhard Wachutka +6 more
TL;DR: In this paper, the carrier lifetime of the starting material (float-zone silicon) as well as processed devices that have both been either doped with transition metals (Pt, Au, Fe) or irradiated with electrons, using two different measurement techniques based on photoconductivity decay and free carrier absorption measurements.
Dissertation
Large-scale simulations of intrinsic parameter fluctuations in nano-scale MOSFETs
TL;DR: In this article, large-scale simulations of samples of 100,000s of devices are carried out in order to accurately characterise statistical variability of the threshold voltage in a real 35 nm MOSFET.
Proceedings ArticleDOI
Performance Design and Simulation Analysis of Vertical Double Gate MOSFET (VDGM)
TL;DR: An optimized body doping for enhanced performance of vertical MOSFET was revealed and the vicinity of DP near the drain end is found to reduce the charge sharing effects between source and drain that gives better gate control of the depletion region for short channel effect (SCE) suppression in nanodevice structure.
Journal ArticleDOI
Extraction of mobility and Degradation coefficients in double gate junctionless transistors
Y V Bhuvaneshwari,Abhinav Kranti +1 more
Journal ArticleDOI
General Geometric Fluctuation Modeling for Device Variability Analysis
TL;DR: The proposed geometric variation (GV) model shows a better efficiency thanks to its IFM-based nature and provides great insights into the device by providing the effective noise sources, equationwise contributions, and sensitivity maps that are useful for device characterization and optimization.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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