Journal ArticleDOI
A physically based mobility model for numerical simulation of nonplanar devices
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TLDR
A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields.Abstract:
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points. >read more
Citations
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Journal ArticleDOI
Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation
Akin Akturk,M. Holloway,Siddharth Potbhare,David J. Gundlach,Bo Li,Neil Goldsman,Martin Peckerar,Kin P. Cheung +7 more
TL;DR: In this article, the authors developed compact and physics-based distributed numerical models for cryogenic bulk MOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures.
Journal ArticleDOI
Continuous model for independent double gate MOSFET
TL;DR: In this paper, an explicit compact model of an independent double gate (IDG) MOSFET with an undoped channel is presented, which includes short channel effects and also mobility reduction, saturation velocity, series resistance and a charge model.
Journal ArticleDOI
Physics-based compact model for ultra-scaled FinFETs
Ashkhen Yesayan,Fabien Prégaldiny,Nicolas Chevillon,Christophe Lallement,Jean-Michel Sallese +4 more
TL;DR: In this paper, a physical and explicit compact model for lightly doped FinFETs is presented, which is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters.
Journal ArticleDOI
Simulation of nanoscale MOSFETs: a scattering theory interpretation
Zhibin Ren,Mark Lundstrom +1 more
TL;DR: A hypothetical, well-designed 25 nm channel length MOSFET is examined by numerical simulation and the results are interpreted in terms of scattering theory, showing that standard, widely-used carrier transport models predict significantly different on-currents for devices of this scale.
Journal ArticleDOI
Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI MOSFETs
TL;DR: In this paper, a general model of recombination-based mechanisms related to electrically floating-body partially-depleted (PD) SOI MOSFETs is presented.
References
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Book
Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.
Journal ArticleDOI
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Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.
Journal ArticleDOI
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
S.C. Sun,James D. Plummer +1 more
TL;DR: In this paper, an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented, which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.
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