Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Understanding Indium Nitride Thin Film Growth Under ALD Conditions by Atomic Scale Modelling: From the Bulk to the In-Rich Layer
Journal ArticleDOI
Numerical study of high-efficient and high-speed In0.1Ga0.9 N/GaN multiple quantum well photodiodes
TL;DR: In this paper, a numerical simulation study of p-i-n photodiodes based on In0.1Ga0.9 N/GaN multiple quantum wells (MQWs) was presented.
Journal ArticleDOI
Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy
Justinas Palisaitis,Anders Lundskog,Urban Forsberg,Erik Janzén,Jens Birch,Lars Hultman,Per Persson +6 more
TL;DR: In this paper, the early stages of InGaN/GaN quantum well growth for In-reduced conditions have been investigated for varying thickness and composition of the wells, and the structures were studied by monochromated scanning transmission electron microscopy-valence electron energy loss spectroscopy spectrum imaging.
Journal ArticleDOI
THE EFFECT OF SPONTANEOUS AND PIEZOELECTRIC POLARIZATION ON THERMAL CONDUCTIVITY OF InN
TL;DR: In this article, the authors investigated the SP and PZ effects on thermal conductivity of wurtzite III nitrides and calculated the combined phonon group velocity, Debye frequency and Debye temperature.
Journal ArticleDOI
Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al 2 O 3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
Yu. N. Buzynin,Mikhail Viktorov,Alexander Vodopyanov,Sergey Golubev,M. N. Drozdov,Yu. N. Drozdov,A. Yu. Luk’yanov,Dmitry Mansfeld,E. V. Skorokhodov,O. I. Khrykin,V. I. Shashkin +10 more
TL;DR: Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al2O3 substrates have been grown for the first time at a rate of 1 μm/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350°C) growth as mentioned in this paper.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
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Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.