Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Theoretical study of the effect of polarization matching layers on the Shockley–Read–Hall recombination-induced dark current density in InGaN/GaN heterostructure solar cells
TL;DR: In this paper, the physical effects of the polarization-induced charge density on the losses due to Shockley-Read-Hall (SRH) recombination in InGaN/GaN solar cells under conditions of low p-GaN doping density was discussed.
Journal ArticleDOI
Nonlinear dynamics in wurtzite InN diodes under terahertz radiation
TL;DR: In this article, the authors carried out a theoretical study of nonlinear dynamics in terahertz-driven n+nn+ wurtzite InN diodes by using time-dependent drift diffusion equations.
Journal ArticleDOI
Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN p-i-n homojunction solar cells
TL;DR: In this paper, the authors theoretically investigated the effects of the unintentional background concentration, indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic performance of InGaN p-i-n homojunction solar cells by solving the Poisson and steady state continuity equations.
Journal ArticleDOI
Numerical simulation of GaN/InGaN p-i-n solar cells: Role of interlayers in promoting photovoltaic response
Debashish Pal,Soumee Das +1 more
TL;DR: In this article, the role of indium composition in the absorber and the presence of polarisation charges have been studied thoroughly in a GaN/InxGa1-xN heterojunction p-i-n solar cell.
Journal ArticleDOI
Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded
Ge Shucheng,Jiangping Dai,Na Gao,Shiqiang Lu,Penggang Li,Kai Huang,Bin Liu,Junyong Kang,Rong Zhang,Rong Zhang,Youdou Zheng +10 more
TL;DR: Deep ultraviolet AlGaN-based nanorod arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer and the reduced quantum-confined stark effect accounted for the great enhancement in IQE.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.