Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.
TL;DR: GaN nanowires and InGaN disk heterostructures are grown on an amorphous SiO2 layer by a plasma-assisted molecular beam epitaxy andStructural studies using scanning electron microscope and high-resolution transmission electron microscopy reveal that the nanowire grow vertically without any extended defect similarly to nanowiring grown on Si.
Journal ArticleDOI
Enhancement of the optical absorption in MgZnO/ZnO quantum well under external electric field
Hassen Dakhlaoui,Mouna Nefzi +1 more
TL;DR: In this paper, the effects of magnesium composition and the external electric field on the optical absorption coefficient lineshape and intersubband transitions in MgxZn(1-x)O/ZnO quantum well are studied.
Journal ArticleDOI
Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering
A. Núñez-Cascajero,L. Monteagudo-Lerma,S. Valdueza-Felip,S. Valdueza-Felip,Cristina Navío,Eva Monroy,Miguel Gonzalez-Herraez,Fernando B. Naranjo +7 more
TL;DR: In this article, the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radiofrequency sputtering were investigated.
Journal ArticleDOI
Determining surface Fermi level pinning position of InN nanowires using electrolyte gating
TL;DR: In this article, the authors demonstrate quantitative determination of surface Fermi level pinning position in InN nanowires using polymer electrolyte gating and 3D electrostatic modeling of charge distribution.
Book ChapterDOI
CHAPTER 8:The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis
Ramon Collazo,Nikolaus Dietz +1 more
TL;DR: In this paper, the physical properties of group III-nitride compound semiconductors are reviewed in the context of their potential application as semiconducting material in photoelectrocatalytic solar fuel structures.
References
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Book
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.