Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Core properties and the role of screw dislocations in the bulk n-type conductivity in InN
TL;DR: It is demonstrated that eliminating the contribution of screw dislocations to the n-type conductivity can be achieved by growing wurtzite InN along the non-polar direction.
Journal ArticleDOI
The ellipsometry versatility in the study of sol-gel films
TL;DR: Spectroscopic ellipsometry (SE) with its fast, precise, non-destructive and noncontact nature, working both ex situ and in situ, is the ideal characterization tool for thin films in terms of optical, struactural and electrical information obtained over wide application domains.
Advanced Electrical Characterization of Semiconductor Nanowires
TL;DR: In this article, a series of experiments and theoretical studies are presented, which are shown to both improve the accuracy of extracted values of carrier concentration and mobility as well as allow for the quantification of additional electronic properties such as the Fermi-level pinning position and the relative magnitudes of individual carrier scattering mechanisms.
Journal ArticleDOI
Electric field and strain induced gap modifications in multilayered GaN
M. Bikerouin,Mohamed Balli +1 more
TL;DR: In this paper, the authors investigated the effect of in-plane biaxial strain and vertical external electric field on the stability and electronic properties of multilayered GaN employing the density functional theory.
Journal ArticleDOI
Electron energy loss near edge structure of InxAl1-xN alloys
TL;DR: In this paper, the electron energy loss near edge structure (ELNES) spectra of the N-K edge of InxAl1-xN with various indium contents were investigated.
References
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Book
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TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
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Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
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Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.