Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
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Journal ArticleDOI
Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal–Organic Vapor Phase Epitaxy
C. Tessarek,Stefanie Fladischer,Christel Dieker,George Sarau,George Sarau,Björn Hoffmann,Muhammad Y. Bashouti,Manuela Göbelt,Martin Heilmann,Michael Latzel,Michael Latzel,E. Butzen,Stephan Figge,A. Gust,Katja Höflich,Katja Höflich,Thorsten Feichtner,Thorsten Feichtner,M. Büchele,Klaus Schwarzburg,Erdmann Spiecker,Silke Christiansen,Silke Christiansen,Silke Christiansen +23 more
TL;DR: The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar.
Journal ArticleDOI
Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering
Muhammad Junaid,Daniel Lundin,Justinas Palisaitis,Ching-Lien Hsiao,Vanya Darakchieva,Jens Jensen,Per Persson,Per Sandström,W.-J. Lai,L. C. Chen,Kuei-Hsien Chen,Ulf Helmersson,Lars Hultman,Jens Birch +13 more
TL;DR: In this paper, the effect of high power pulses in reactive magnetron sputter epitaxy on the structural properties of GaN thin films grown directly on Al2O3 (0001) substrates was studied.
Journal ArticleDOI
Constructive and comprehensive studies on the advantages of using staggered In x Ga 1-x N/In y Ga 1-y N QWs in LEDs
TL;DR: In this article, different forms of the staggered QW; single sided and symmetric, with different Indium compositions in the well, have been studied comprehensively, and the best results are obtained for the symmetrically staggered QWs, where the overlap increases even up to three times that of the rectangular QW and using this structure the operating current may be decreased by more than two orders of magnitude to obtain the same transition energy.
Journal ArticleDOI
Advantages of InGaN/InGaN quantum well light emitting diodes: Better electron-hole overlap and stable output
TL;DR: In this article, a comprehensive and systematic studies on InGaN/InGaN quantum well light emitting diodes reveal that the overlap of electron and hole wave functions can be increased even at low operating currents by the introduction of In in the barriers.
Journal ArticleDOI
Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
Ching-Lien Hsiao,Justinas Palisaitis,Muhammad Junaid,Ruei-San Chen,Per Persson,Per Sandström,Per-Olof Holtz,Lars Hultman,Jens Birch +8 more
TL;DR: The spontaneous formation of AlInN core-shell nanorod arrays with variable In concentration has been realized by ultrahigh-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layer assis...
References
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Journal ArticleDOI
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Band parameters for III–V compound semiconductors and their alloys
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Journal ArticleDOI
Band structure of indium antimonide
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