Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement
Wei Liu,Wei Liu,Degang Zhao,Desheng Jiang,Ping Chen,Dongping Shi,Zongshun Liu,Jianjun Zhu,Jing Yang,Xiang Li,Feng Liang,Shuangtao Liu,Yao Xing,Liqun Zhang,Mo Li,Jian Zhang +15 more
TL;DR: In this article, the photovoltaic intensities of MQW solar cells with different well thickness are almost the same, and the authors conclude that the increase of photogenerated carriers in the thick QWs may partially counteract the adverse effects of both polarization effect and deteriorated material quality on the photocurrent for the MQWs with thick InGaN well layers, compared with the thin well ones.
Book ChapterDOI
Novel Emerging Materials: Introduction and Evolution
TL;DR: In this article , the authors introduce twistronics, a new branch of device engineering wherein the relative (twist) angle between the vertically stacked two-dimensional layers dictates the physical properties.
Journal ArticleDOI
Study of simulations of double graded InGaN solar cell structures
TL;DR: In this paper , the performances of various configurations of InGaN solar cells are compared using next-nano semiconductor simulation software, and the results indicate that an increase in I sc and η results from increasing both the fixed and maximum indium compositions, while the V oc decreases.
Journal ArticleDOI
Many-Body Calculations of Excitons in Two-Dimensional GaN
TL;DR: In this paper , an ab initio study on quasiparticle excitations and excitonic effects in two-dimensional (2D) GaN based on density-functional theory and many-body perturbation theory is presented.
Journal ArticleDOI
Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
TL;DR: In this article, the authors demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells and find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations.
References
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Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.