Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Near-infrared phosphorescence: materials and applications
TL;DR: This review describes the overall progress made in the past ten years on NIR phosphorescent transition-metal complexes including Cu(I), Cu(II), Cr(III), Re(I, Re-I), Re-III, Ru(II) and Au(I) complexes, with a primary focus on material design complemented with a selection of optical, electronic, sensory, and biologic applications.
Journal ArticleDOI
Visible light-driven efficient overall water splitting using p -type metal-nitride nanowire arrays
M. G. Kibria,Faqrul A. Chowdhury,Songrui Zhao,Bandar Alotaibi,Michel L. Trudeau,Hong Guo,Zetian Mi +6 more
TL;DR: It is shown that efficient and stable stoichiometric dissociation of water into hydrogen and oxygen can be achieved under visible light by eradicating the potential barrier on nonpolar surfaces of indium gallium nitride nanowires through controlled p-type dopant incorporation.
Valence band splittings and band offsets of AlN, GaN and InN.
Su-Huai Wei,Alex Zunger +1 more
TL;DR: In this article, first principles electronic structure calculations on wurtzite AlN, GaN, and InN reveal crystal field splitting parameters ΔCF of −217, 42, and 41 meV, respectively.
Journal ArticleDOI
Conductivity in transparent oxide semiconductors
Pdc King,Tim D. Veal +1 more
TL;DR: Understanding this interplay, as well as the microscopic contenders for providing the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.
Journal ArticleDOI
InGaN Solar Cells: Present State of the Art and Important Challenges
TL;DR: A review on the present state of the art of In-based solar cells is presented and the most important challenges toward the high-efficiency N materials are discussed in the context of the recent results.
References
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Journal ArticleDOI
RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
TL;DR: In this paper, micro-Raman scattering measurements for a -plane InN film were carried out, which can be identified as the A 1 transversal optical (TO), E 2 (high) and E 1 longitudinal optical (LO) mode phonon, respectively.
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Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well
TL;DR: In this paper, the transport and low-field mobility properties of bulk InN and a two-dimensional electron gas confined in an InGaN/GaN quantum well with regard to various parameters such as well width and interface roughness as a function of temperature are compared.
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Investigation on the structural origin of n-type conductivity in InN films
Hui Wang,Dongwei Jiang,L L Wang,Xuecong Sun,Wenzhu Liu,D. G. Zhao,J. J. Zhu,Liu Zongliang,Y T Wang,Zhang Songquan,Hui Yang +10 more
TL;DR: In this article, a study of the correlation between the electrical properties and structural defects in nominally undoped InN films is presented, where the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility.
Journal ArticleDOI
Surface electronic properties of undoped InAlN alloys
Philip David King,Tim D. Veal,A. Adikimenakis,Huaixian Lu,LR Bailey,Eleftherios Iliopoulos,Alexandros Georgakilas,William J. Schaff,Christopher F McConville +8 more
TL;DR: In this paper, the variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements.