Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
ScGaN and ScAlN: emerging nitride materials
Michelle A. Moram,Siyuan Zhang +1 more
TL;DR: In this article, a review of the recent development and future prospects for Sc-based III-nitride alloys in energy-efficient device applications is presented, including lattice-matched Sc0.18Al0.82N/GaN system.
Journal ArticleDOI
Microstructural origins of localization in InGaN quantum wells
Rachel A. Oliver,S.E. Bennett,Tongtong Zhu,D.J. Beesley,Menno J. Kappers,David W. Saxey,Alfred Cerezo,Colin J. Humphreys +7 more
TL;DR: In this paper, the authors review the different possible structures within the quantum wells which could act as localization sites, at length scales ranging from the atomic to the tens of nanometre range.
Journal ArticleDOI
Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon
TL;DR: This study offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate.
Journal ArticleDOI
High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode
Bandar Alotaibi,Mohammad Harati,Shizhao Fan,Songrui Zhao,Hieu Pham Trung Nguyen,M. G. Kibria,Zetian Mi +6 more
TL;DR: It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping.
Journal ArticleDOI
Band gap tuning in GaN through equibiaxial in-plane strains
TL;DR: In this paper, the structural transformations and the relative variation in the band gap energy of (0001) gallium nitride (GaN) films as a function of equibiaxial in-plane strains are studied by density functional theory.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
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Journal ArticleDOI
Band structure of indium antimonide
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