Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE
TL;DR: In this article, the effect of nitridation time of the sapphire substrates on the structural, morphological, optical, and electrical characteristics of InN thin films grown by plasma assisted molecular beam epitaxy technique was investigated.
Journal ArticleDOI
Lowering of growth temperature of epitaxial InN by superlattice matched intermediate layers
TL;DR: In this paper, the indium metal induced 1"×"1 and 7"×'7 superstructural phases of Si(111) at lower growth temperatures than those previously employed were used to obtain better crystallinity and emission properties.
Proceedings ArticleDOI
Effects of morphology on the emission of photons from GaN membranes fabricated using surface charge lithography
TL;DR: In this article, the spectral and spatial distribution of the emitted photons from GaN nanomembranes is analyzed to investigate ultra-thin suspended GaN membranes fabricated by focused ion beam (FIB) pre-treatment and subsequent photoelectrochemical (PEC) etching.
References
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Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.