Journal ArticleDOI
When group-III nitrides go infrared: New properties and perspectives
TLDR
In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.Abstract:
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...read more
Citations
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Journal ArticleDOI
Non-parabolicity and inter-valley transitions within zinc-blende indium nitride
TL;DR: In this article, the authors examined how the electron transport within zinc-blende indium nitride varies in response to changes in the non-parabolicity of the indium ion.
Journal ArticleDOI
Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays
TL;DR: By using multiple growth steps that separate the nucleation and growth processes, nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy as mentioned in this paper.
Journal ArticleDOI
Probing the large bandgap-bowing and signature of antimony (Sb) in dilute-antimonide III-nitride using micro-Raman scattering
TL;DR: In this article, the authors investigated room-temperature, nonpolarized Raman scattering of nominally undoped dilute-antimonide GaSbN nanostructures, grown by plasma-assisted molecular beam epitaxy on n-type Si substrates.
Dissertation
Etude optique de nanofils GaN et de microcavités GaN/AIN
TL;DR: In this paper, the spectroscopie de microdisques d'AlN contenant des boites quantiques de GaN has been studied and the transition from 3.45 eV to 3.14 eV has been observed.
Journal ArticleDOI
The effects of built-in electric field and donor impurity on the linear and nonlinear optical properties of a wurtzite In x Ga 1- x N/GaN nanostructures
Xiao-Chen Yang,Yan Xing +1 more
TL;DR: In this article, the effects of built-in electric field (BEF), ternary mixed crystal (TMC), impurity and CSQD size on optical absorption coefficients and refraction index changes were investigated in a wurtzite In x Ga1-x N/GaN core-shell quantum dot with donor impurity by using density matrix approach.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Introduction to Solid State Physics
TL;DR: Kind's new edition is to be welcomed as mentioned in this paper, with a revised format and attractive illustrations, and with the inclusion of much new material this book has become one of the best sources for undergraduate teaching, likely to give the student a wish to dig deeper into the solid state.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.